I. Introduction
Cu Clip is the next generation of interconnects for IGBTs and Wide band gap packaging [1]. It is a remarkable method to resolve excessive parasitic inductance, overall package resistance and improves heat dissipation capability up to power cycling reliability [2]. Cu clip is proven on broad spectrum of application, i.e diodes, MOSFETs, ESD protection. The configuration of package that contains Cu clip requires additional scrutiny during encapsulation. The flow mechanism of the mold compound in clipbond is different than a wirebond packages. Cu-clip is a large metal component that contributes to mold flow turbulence. Package encapsulation is done through transfer molding process. Based on its formulation, epoxy mold compound (EMC) will transform itself from slow reacting solid to liquid and finally solid thermoset as a function of heat and pressure. The liquid mold compound will start to flow out from cull area into several runners and split further to narrower sections called gate. Thru the gate, the compound flows into the package where gate specifications, EMC properties, process conditions and internal package arrays will influence final visual mechanical, post mold shrinkage, warpage, shear tension caused by flow. The typical molded skeleton structure is shown in Fig. 1.