3D Electromigration Modelling for VLSI

Electromigration is an important failure mechanism in VLSI interconnections since the inception of integrated circuits till now. The complexity of the underlying physics of electromigration is increasing as we advance in the technology nodes, and with the current FinFET technology, electromigration prediction must be designed in and hence, accurate electromigration prediction modeling becomes necessary. This work presents a recently developed electromigration prediction package which provides electromigration modeling in 3D and able to incorporate temperature gradient and thermo-mechanical stress gradient in the modeling. It can also model an entire circuit so that IC designers can apply the model to their designed circuits to optimize their design by locating the weak spots of electromigration in the layout design.