Electric-Magnetic-Thermal Co-simulation Method for SiC Gate Turn-off Thyristor Module

A new electric-magnetic-thermal co-simulation method is proposed to optimize the design of SiC GTO module. The proposed co-simulation is a transient method with multiple time scale, which mainly includes software PSpice, ANSYS Q3D and COMSOL. The results show that packaging parasitic parameters adversely affect switching characteristics of SiC GTO. As a result, the junction temperature and case temperature are increased in comparison with no parasitic parameter. When heat dissipation is water cooling, the junction temperature and case temperature rise with gradually declined rising rate until steady temperature of 81°C and 41°C. With air-cooled heat dissipation, the temperature presents approximately linear rise, but the temperature of solder joint exceeds the melting point of Sn-3.5Ag solder (221°C) from 7.3s so that module failure happens.