A 60GHz Traveling-Wave SPDT Switch with HBM and CDM ESD Protection in 45nm SOI CMOS

A DC-60GHz wideband single-pole double-throw (SPDT) traveling-wave switch with ESD protection is designed in a 45nm SOI CMOS technology. Substrate coupling can be minimized by a buried oxide (BOX) layer. The switch achieves insertion loss (IL) of about 2.7dB and isolation of near 40dB at 60GHz without ESD protection. Full-chip ESD protection achieves 2KV in human body model (HBM) testing and 5.2A in charged device model (CDM) stressing, which is the highest reported CDM ESD protection level. Measurement reveals strong impact of ESD-induced parasitic effect on 60GH SPDT, causing IL change to 7.8dB and Iso to 44dB, a sharp degradation of insertion loss of over 5dB at 60GHz.