Parallel Dual-Gate Thin-Film Transistors for Sensing and Neuromorphic Computing

Of the two gate electrodes sandwiching the channel region of a parallel, dual-gate (DG) thin-film transistor (TFT), one can be used for modulating the threshold voltage associated with the other. This unique capability is used in sensing to set the operating point of the sensing electrode and in neuromorphic computing to adjust the "weight" of the input. Made of units each containing a DG TFT with an extended top sensing gate, a tactile sensor array is demonstrated for distributed force sensing. Capable of emulating both the excitative and inhibitive transmission of a signal across a synaptic gap, a unit containing such a DG TFT combined with a memory capacitor is replicated and organized to construct an artificial neural network (ANN). Lastly, the monolithic merging of a sensing array and an ANN is proposed.