Silicon Nanowire Transistor Integrated with Phase Change Gate

The electronic synaptic devices based on phase change memory resistors have attracted extensive attention. Here, we design and fabricate a novel silicon junctionless nanowire transistor (JNT) integrated with NiAl/SiO
2
/GST stack gate, whose charge storage states can be regulated by emptying and filling the donor-like traps under interface electric fields. A shift of the threshold voltage can be achieved from -0.72 V for the stack gate to 0.27V for only GST gate, which corresponds to the change of the donor-like trap states density from 3.1×10
¹⁸
eV
^-1
cm
^-3
to 2.6×10
¹⁸
eV
^-1
cm
^-3
. The charges can be trapped into the interfaces of GST and SiO
2
by the electrical pulse through the GST gate.