Total-Ionizing-Dose Effects in Nanotube Tunnel Field-Effect Transistor with Bias-Induced Electron-Hole Bilayer

In this paper, the total-ionizing-dose (TID) effects in nanotube tunneling field-effect transistor with bias-induced electron-hole bilayer (EHBNT-TFET) are investigated by 3-D TCAD simulation for the first time. The effects of radiation dose and geometric parameters on TID response, as well as the radiation effect on flicker noise are evaluated in detail. The results show that ON-state current and subthreshold swing are immune to irradiation-induced oxide trap charges and interface traps, while OFF-state current degrades significantly. The TID response is found to strongly depend on the inner-gate diameter and the underlap length between inner-gate and drain. The drain current noise spectral density after ionizing radiation shows an obvious increase due to the existence of interface traps.