Superjunction SiC TCOX-MOSFET: Study and Comparison

Silicon carbide MOSFET has been commercialized and applied to industrial and automotive area for many years. Superjunction structure contributes to a good tradeoff between specific on-resistance (R
on,sp
) and breakdown voltage (BV). In this article, superjunction structure is applied in thick central oxide gate structure MOSFET (TCOX-MOSFET) to achieve a better performance. A current commercial SiC MOSFET product (AIMW120R060M1H) is also used to make a comparison. The new superjunction MOSFET (SJ-TCOX-MOSFET) has a 72% smaller specific on-resistance compared to the TCOXMOSFET. Additionally, the total gate charge (Q
G
) is improved by 56.9% and 89% respectively compared to TCOX-MOSFET and AIMW120R060M1H. The total switching loss (E
tot
) is also improved by 26.5% and 42.3% respectively compared to them. The simulation results show that the new SJ-TCOX-MOSFET is a desirable structure.