RC-Coupled SCR devices for advanced nanoscale COMS process

To reduce the trigger voltage and enhance holding voltage of traditional electrostatic discharge (ESD) protection device, a novel RC-Coupled SCR (RCSCR) is proposed, Compared to the traditional LVTSCR, the proposed RCSCR has an additional N+ active area and a dummy gate. Also, a large gate resistance is added to form RC coupling, which greatly reduced the trigger voltage of this design. The other improved RC-Coupled SCR(IRCSCR) is also studied, which by disconnecting anode and the additional N+ diffusion area, the probability of early breakdown during the ESD stress is reduced, making it very suitable for ESD protection of I/O and core circuits in 25nm CMOS process.