Simulation Study of a Novel 4H-SiC Split Gate Double Trench MOSFET with Side Wall Gate

A novel 1200V 4H-SiC split gate double trench MOSFET with side wall gate (SWSG-DTMOS) is proposed and studied in this paper. The split gate and side wall gate structures decrease the C
rss
and C
iss
of SWSG-DTMOS respectively. The simulation results show that the Q
g
, E
off
and E
on
of SWSG-DTMOS decreases by 56%, 75% and 57% respectively compared with that of conventional DTMOS. Hence the proposed SWSG-DTMOS is easier to be driven and able to work at higher switching frequency. The thicker split gate oxide reduces the E
ox,max
of SWSG-DTMOS, therefore the long term reliability of its SiO
2
layer is improved.