A Novel Double Trench 4H-SiC MOSFET with Integrated Schottky Barrier Diode

A novel double trench 4H-SiC MOSFET with integrated Schottky barrier diode (SBD) is proposed for the first time. The SBD is integrated by forming a direct metal contact with epitaxial layers at the sidewall of the source trench. The proposed device can bypass the body diode, thereby reducing the forward voltage drop (V
F
) in the third quadrant and avoiding bipolar degradation. Compared with the conventional DTMOS (Conv-DTMOS), the V
F
of the diode is reduced from 3.01V to 1.74V at -300A/cm
²
current density and the reverse recovery peak current (I
RRM
) is reduced by 46.1%. Moreover, the turn-on loss (E
on
) of the MOSFET is reduced by 8% with almost no degradation of specific on resistance (R
onsp
) and breakdown voltage.