A High-Density Large-Ratio Fuse Based Oxide Devices for One-time-programmable Memory Applications

In this paper, the oxide fused and anti-fused behavior has been observed in a simple metal-oxide-metal device: Pt/HfO2/NiO
x
/Ni. The anti-fused state and fused state can be achieved by applying program voltage on the devices with or without current compliance, respectively. And the resistance window of the two states reaches about 10
⁹
, which can effectively reduce the possibility of incorrect programming. It also showed excellent retention characteristics and a simple structure friendly for integration. It can be well used in the field of high reliability of one-time programmable memory.