Research on the measurement of space charge mobility in liquid dielectric based on the Kerr effect

The migration process of space charges in liquid dielectrics under a strong electric field often includes complex dynamic processes such as charge generation, scattering, and disappearance, which are difficult to measure. In this paper, SiO
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films with a thickness of about 100, 200, and 400 nm are deposited on the electrode surface by magnetron sputtering, respectively. The effect of film thickness on space charge injection and migration under switching overvoltage is discussed. It effectively suppresses the amount of charge injected by the electrode, but it has little effect on the space charge mobility of the liquid dielectric. A measurement method for measuring the space charge mobility of liquid dielectric is proposed, which is used in the simulation of the space charge transport process in future work.