2D Scalar Wave Model for Fast Analysis of Apodized BAW Devices

This paper proposes use of a two-dimension (2D) scalar wave model for fast analysis of apodized AlN-based RF BAW devices. First, the working principle and model setup are introduced. Only one particular Lamb mode (S
1-
) is considered, and its behavior is modeled by a simple scalar wave equation looking from the top surface. A multiple layers are added to the side boundaries so that mode conversion to other modes is treated as leakage to surrounding. The wavenumber of field distribution for each resonance mode are calculated, and then its excitation coefficient, quality factor and resonance frequency are derived. The device input admittance is calculated by applying derived parameters to the equivalent circuit. Its experimental verification will be discussed near future.