Investigation of a new power junctionless MOSFET using 2-D numerical simulation

Despite the widespread use of power MOSFETs in numerous applications, their channel mobility has been a serious issue hindering the improvement of electrical performances. In this paper, a new power MOSFET established on junctionless design is presented. A numerical investigation is carried out using ATLAS 2-Dimensional device simulator in order to analyze the electrical performances of the proposed structure, namely the breakdown voltage, the output and the transfer characteristics. In this context, comparisons are conducted by considering the conventional structure as a benchmarking prototype. In addition, the drain current is investigated with respect to variable dimensions of the buried oxide. The obtained results show the superiority of this new design, and give more insights with regard to the use of junctionless concept in power MOSFET devices.