Simplified Calculations of Radiation Dose-Rate Sensitivity of Bipolar Transistors

A simplified approach to estimating radiation-induced Si-SiO2 interface trap densities, based on steady-state populations of relevant mobile species, is presented. The dose-rate sensitivity arises from bimolecular reaction terms. Molecular hydrogen increases the effects of ionizing radiation. Exciton contributions explain effects at high dose-rates. Calculations are consistent with known trends in dose, dose rate, hydrogen content and temperature.