Impact of experimental conditions for the occurrence of stuck bits in commercial SDRAM

Stuck bits in SDRAM are reported in many different works. This failure mode can be critical for space applications as systematic errors on a same bit can generate a failure of the embedded ECC. Different commercial SDRAM were irradiated under protons at Paul Scherrer Institute in order to assess their sensitivity to stuck bits and determine the experimental conditions favorable to their occurrence. The objective of this work was also to identify the physical failure modes in recent SDRAM technologies and to observe the persistence of SHE and their annealing over time.