A new approach of modeling the ultra-short channel ballistic GAA MOSFETs

Compact models are useful to avoid spending a numerous amount of time in numerical simulations which can accurately evaluate the ultra-short channel device properties. One numerical compact model proposed here is describing the drain current in ballistic mode by using one unique smoothing function representing the transmission coefficients for all operating regions. The model is addressing the compact model for the subthreshold region basing on our previous study, in which the DIBL and the SDT effects are taken into a consideration. In this paper, a method of establishing the smoothing function is introduced for expressing the important parameters in the model overall operating regions. Compared with the TCAD NEGF simulation, this proposed numerical compact model demonstrates a good agreement.