Compact Modeling of Phase Change Memory with Parameter Extractions

A compact model of mushroom-type phase change memory (PCM) with parameter extractions is reported in this work. General device physics of heating dynamics, crystallization kinetics and filaments formation are covered in four essential modules. The memory resistances are calculated with the conformal mapping technique, together with corrections for non-ideal geometries. A flow of model parameter extractions is then developed. With a procedure of seven steps, all model parameters are obtained with verifications from experimental PCM prepared with 40nm CMOS process. The model applicability in PCM designs are then demonstrated with Verilog-A implementation and simulation convergences of typical circuits.