3.8-mW 26–29-GHz CMOS LNA With 21.6-dB Gain and 2.49-dB NFavg Using Dual Self-Bias and Gain Boosting

We demonstrate a low-power (
$P_{\text {dc}}$
) and high-gain low-noise amplifier (LNA) in 90-nm CMOS for 28-GHz 5G new radio. To simplify the bias arrangement and to boost the gain of the current-reused gain and output stages, we propose the dual self-bias topology. An inductive interconnection, equivalent to a parallel grounded inductance of
${L}_{B}$
in ac, is used for self-bias and gain boosting of the gain stage. A resistive feedback, equivalent to an open in ac, is used for self-bias of the output stage. This leads to single power supply of the gain and output stages. Body-floating technique is used for noise figure (NF) reduction in transistors
${M}_{{1}}$
–
${M}_{{3}}$
. The LNA consumes 3.8 mW and achieves prominent
${S}_{{21}}$
of 21.6 dB, 3-dB bandwidth of 25.8–29.2 GHz, the lowest NF of 2.24 dB at 27 GHz, average NF (NFavg) of 2.49 dB for 23.5–29.5 GHz, figure-of-merit (FOM) of 2.41 GHz, and output third-order intercept point (OIP3) of 3.2 dBm. To the best of our knowledge, the
${P}_{\text {dc}}$
and NF performances are one of the best results ever reported for millimeter-wave CMOS LNAs with gain higher than 15 dB and
${P}_{\text {dc}}$
lower than 10 mW.