A Low-Power Low-Noise W-band LNA in 90-nm CMOS Process With Source Degeneration Technique

This letter presents the design of a
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-band low-noise amplifier (LNA) using a four-stage common-source (CS) architecture fabricated in a 90-nm CMOS process. The LNA employs source degeneration with a transmission line to achieve a minimum noise figure (NF) of 5.0 dB and flat gain of 16.9 ± 1.5 dB from 76.5 to 87.5 GHz for a 3-dB bandwidth of 11 GHz. The circuit consumes only 14 mW of dc power when biased at a 1 V power supply.