One RF Amplifier Based on the Four-Zone MOSFET Integrated With Health Monitoring Sensors

This letter reports a radio frequency (RF) amplifier based on the four-zone MOSFET integrated with health monitoring sensors. The characteristic of the MOSFET is that it has four zones and each zone integrates thermoelectric sensors. The RF amplifier consists of the matching networks, one dc bias circuit, one CMOS amplifier circuit, and the final microwave power sensor. The purpose of the designed circuit is to provide an integrated circuit health monitoring method using passive sensors. S-parameter measurement illustrates that the RF amplifier has good impedance matching at 3 GHz. The input 1-dB compression point is 1.31 dBm. The experiment shows that when the input power changes from −10 to 0 dBm, the output of the health monitoring sensor changes from 0.122 to 0.138 mV @ 2.8 GHz, from 0.145 to 0.163 mV @ 3 GHz, and from 0.142 to 0.152 mV @ 3.2 GHz.