Design a GaN HEMT-Based Broadband High-Efficiency Rectifier Using a Wideband Phase Shift Structure

This letter presents a broadband high-efficiency rectifier based on a GaN transistor. A wideband phase shift structure consisting of parallel coupled lines and T-shaped networks is utilized to realize a constant phase shift over a wide frequency band. Besides, the continuous class-
$\text{F}^{-1}$
operation mode theory is employed to obtain high efficiency across a wide frequency band. The combination of the phase shift network and the continuous class-
$\text{F}^{-1}$
operation mode leads to a wideband high-efficiency RF-dc rectifier operation. Moreover, shunt transmission lines in T-shaped networks are replaced by existing bias lines, which significantly reduce the size of the circuit. For validation, a broadband high-efficiency RF-dc rectifier operating in 2.0–3.0 GHz is designed and fabricated using a CGH40010F GaN high electron mobility transistor (HEMT). Measurements illustrate that the implemented rectifier can realize an efficiency of over 70% across the entire operating band when an input power of 40 dBm is applied and the dc load is
$65~\Omega $
. Also, the size of the resultant circuit is only
$2.0\times1.8$
cm.