Hybrid Integration of Chips Using SISL for Ka-Band High Combining Efficiency Power Amplifier

Hybrid integration of millimeter-wave (mm-wave) chips for power combining amplifier using substrate-integrated suspended line (SISL) is studied for the first time in this letter. A bond wire compensation structure with small size, wide bandwidth, and cavity mode suppression is proposed, and the wire bonding interconnect obtains the bandwidth of 0–48 GHz. A power combining amplifier based on this structure is proposed and the heat dissipation optimization is carried out. Finally, a four-way full Ka-band spatial power combining amplifier with high combining efficiency is fabricated. From 26 to 40 GHz, the maximum output power at the 1-dB compression point is 31 dBm, and the power combining efficiency is 78%–93%.