Wide Wavelength Range Emission from InAs/GaSb Type-II Superlattice Grown by MOVPE

We investigated the emission wavelength shift of type-II InAs/ GaSb superlattice on InAs substrate grown by MOVPE. With increasing the injection carrier density, very wide wavelength range emission over 2000 nm was observed. Calculated spectrum using
$k\cdot p$
perturbation method show the same tendency.