Low threshold current operation of membrane DR laser on Si with buried-ridge waveguide and ACPM grating for On-chip Optical Interconnection

To reduce energy consumption of GaInAsP membrane laser on Si, we introduced BRW (buried-ridge-waveguide) structure and ACPM (Asymmetric Corrugation Pitch Modulation) grating to enhance the optical confinement to active region. Low threshold current of 0.16 mA and SMSR of 45dB were obtained by fabricating membrane DR laser with these structures.