Development and characterization of a monolithic ceramic pre-package for SiC-semiconductor devices based on LTCC technology

In this contribution we investigated the Zero shrinkage (lateral shrinkage < 1 %) using pressure assisted sintering (PAS) for the three commercial Low temperature cofired ceramic (LTCC) materials GT 951, L8 and 9k7 regarding the ability to embed SiC semiconductor devices in a full ceramic pre-package. For electrical interconnection purpose we designed a technology inherent sample layout and selected suitable Ag metallizations for contact pads and interconnections. Using the evaluated technology parameters, we fabricated LTCC pre-packages with embedded □5 mm dummy SiC dies based on the LTCC material 9k7. The analysis of these packages indicates no obvious defects and exhibits a feasible electrical interconnection between LTCC package and SiC semiconductor die. The outstanding temperature stability of LTCC materials and the direct electrical connection which is provided by this approach can be used to establish the advantages of SiC semiconductors to full capacity for the first time.