Leveraging Undoped CdSeTe for >950 mV

Despite recent measurements indicating excellent quality of CdTe-based absorber materials, specifically the CdSeTe alloy, the technology has yet to significantly close its longstanding voltage deficit in cells employing polycrystalline absorbers. To address this, we propose utilizing CdSeTe as an intrinsic layer in an n-i-p cell structure, preserving its exceptional lifetime and shifting the burden of doping to other materials. We evaluate the feasibility of this design using SCAPS 1D, and use this modeling to identify which material parameters are most important. Based on these results, we believe the n-type and absorber materials which are already available are sufficient, and the remaining challenge is to find a suitable p-type material. Several candidates are identified based on the crucial parameters identified with the modeling, and two are explored experimentally.