Bulk lifetime study of p-type Czochralski silicon with different processing history using quinhydrone-methanol surface passivation

The bulk lifetimes of p-type textured Cz-Si wafers with different thermal processing history were assessed using quinhydrone-methanol (QH-MeOH) surface passivation. The wafer bulk quality quantified by effective carrier lifetime (
$\tau_{\text{eff}}$
) and implied voltage (iVoc) depends on the thermal processing of different surface treatment and passivation materials. It was observed that wafers which had H
2
S reaction at 550°C demonstrated higher
$\tau_{\text{eff}}=235\ \mu\mathrm{s}$
and
$\text{iV}_{\text{oc}}=693\ \text{mV}$
implying bulk quality improvement after the H
2
S reaction process.