An Area-Efficient and Robust Memristive LUT Based on the Enhanced Scouting Logic Cells

The resistive random access memory (RRAM) is a two-terminal device, which represents logic states with its different resistance states. The RRAM devices were applied to the Look-Up Table (LUT) in recent years. However, the RRAM based logic circuits are affected by the resistance variation of the RRAM devices. This work proposes a memristive LUT scheme based on the enhanced scouting logic (ESL) cells, to address this challenge. The read-write separation feature of the ESL cell is applied to reduce the number of working cycles of the proposed LUT circuit. The Monte Carlo simulation results show that the proposed LUT scheme has the small standard deviation. And the proposed LUT has relatively small area and high performance.