Strain Effects in a Double Dot Quantum Dot System

Mechanical strain is a detrimental phenomenon in a lithographically defined gates quantum dot system. Such an effect can be observed when the system experiences a radical change in temperature from 300 K to a temperature below 1 K. Here, two types of double quantum dot architectures under different scenarios are studied: variation of silicon dioxide thickness, gate dimensions, and different gate materials using COMSOL Multiphysics. Results show that increasing the thickness of silicon dioxide and using Palladium as gate material can reduce the overall strain effects in the system.