Electrical Properties of p-CuFeO2/n-Si Heterojunction

The conditions for the fabrication of anisotype heterostructures p-CuFeO
2
/n-Si by the method of RF magnetron sputtering of CuFeO
2
thin films onto n-Si crystalline substrates have been studied. The mechanisms of current transfer are analyzed by temperature dependences of I-
$V$
characteristics. The influence of light on the electrical properties of the p-CuFeO
2
/n-Si heterostructure is determined. The optical properties of CuFeO
2
thin films deposited on glass substrates are studied.