Monocrystalline ZnO Nanorods Thin-film based Schottky Barrier Diode

This work presented the fabrication, characterization, and simulation of a planar Pd/monocrystalline ZnO/Al Schottky barrier diode. The monocrystalline ZnO nanorods thin films were grown on n-type Si
$< \mathbf{111} >$
wafers by hydrothermal process. The XRD and SEM analysis investigated the crystalline structure and surface morphology of ZnO thin films. The I-V characteristics were measured and analyzed in the bias voltage range from −2 V to 2 V at room temperature. According to thermionic emission theory, the electrical parameters are calculated such as saturation current, ideality factor, barrier height, the rectification ratio Simulation of this Schottky diode is conducted using SILVANO TCAD software for 2D-numerical simulated analysis. The comparison of obtained I-V simulation results shows good agreement with those obtained from experimental work.