Low Temperature Effects on the Operation of Nanomaterials Based Electronic Devices

In this work we investigate the effects of low temperature on the performance of a nano device. Modeling the behavior of gate-all-around (GAA) field-effect transistor (FET) is achieved with Ensemble Monte Carlo (EMC) simulations, with a semiconducting zigzag single-wall carbon nanotube (CNT) - (49,0) as the active channel. The principal electron scattering mechanisms considered include single lowest radial breathing mode (RBM) phonons, as well as longitudinal acoustic (LA) and optical (LO) phonons. In this work, EMC simulations are conducted self-consistently with the electrostatic solver to calculate device currents. A wide-range of temperature is considered - from 4 °K to 220 °K. Steady-state results show that for this wide range of temperature, and appropriate gate/source-drain voltages, the transistor operates properly, and electrons deliver up to a fraction of microwatt power. The power delivered is found to be relatively similar across the temperatures considered. The differences are attributed to the difference in electron-phonon scattering rates for different temperatures.