Structural, Optical and Photoelectric Properties of Crystals and Heterostructures Based on the In4Se3, In4Te3, and In4(Se3)1-x(Te3)x Semiconductors

The structural features of the CdSb-In
4
Se
3
, CdSb-In
4
Te
3
, and CdSb-In
4
(Se
3
)
1-x
Te
3x
heterojunctions obtained by RF cathode sputtering and the In
4
Se
3
-In
4
(Se
3
)
1-x
Te
3x
, In
4
Se
3
-In
4
Te
3
heterojunctions obtained by liquid-phase epitaxy are studied. Comprehensive SEM, EDS, and AFM measurements allow to set the conditions of laser treatment of the heterojunctions for performing photon correction of their structural and photosensitive properties.