20 GHz LNA and 29 GHz PA on SiGe BiCMOS technology for SatCom phased array systems

This paper presents a K-band single-ended Low-Noise Amplifier (LNA) and a Ka-band single-ended Power Amplifier (PA) for a SatCom phased-array transceiver. The two circuits have been developed in 130-nm SiGe:C BiCMOS technology and fully characterized. In particular, the PA achieves 28.5 dB peak small-signal gain, 38.8 % peak power added efficiency (PAE), and an OIP3 better than 23.7 dBm within the entire operating frequency band. The maximum power consumption is 76 mW with a 2 V supply voltage, and it occupies an area of 1234 μm × 758 μm, pads included. The LNA achieves 33 dB peak power gain, 2.3 dB minimum noise figure, and -20 dBm IIP3 at 20 GHz. The NF, in the entire frequency band of interest, is less than 2.6 dB. It exhibits a power consumption of 20.7 mW with a supply voltage of 2.4 V and occupies an area of 1000 μm × 800 μm pads included.