Layer-by-Layer Synthesis and Analysis of the the Phase Composition of Cdx TeyOz/CdS/por-ZnO/ZnO Heterostructure

Cd
x
Te
y
O
z
/CdS/por-ZnO/ZnO heterostructures were synthesized using a combination of electrochemical etching followed by the ion layer adsorption and reaction method (SILAR). Electrochemical etching was applied to form a porous ZnO layer. Chemical deposition from the electrolyte solution was carried out to form CdS and Cd
x
Te
y
O
z
films. The phase composition of the obtained heterostructures was characterized using XRD and Raman methods. We have demonstrated that the Cd
x
Te
y
O
z
film consists of different phase configurations, depending on the concentration of each element. The extreme cases are the formation of Cd
x
O
z
and TeyOz. Furthermore, the formation of complex CdTeO
3
CdTe
3
O
8
oxides is observed. Such structures have prospects for wide application in electronic devices due to the ability to adjust the phase and component composition.