New n-Vertical Trench Epilayer P+ -Shield Accumulation Mode MOSFET with Enhanced Switching and FOMs

We have proposed in this work, a new vertical Trench Epilayer P
⁺
-shield Accumulation Mode MOSFET device. Using ATLAS 2-D numerical simulation with different models, we have shown fruitful results in term of switching and FOM comparing with the Conventional Accumulation Mode MOSFET. We get Gate to drain charge value as low as 38.2 pC, FOM of 31.71 mΩ.nC at cell pitch of 3μ in our proposed new device. Thus, showing that the proposed device to be better than the past Accumulation Mode MOSFET in reducing the total gate charge required and gate-to-drain capacitive (Cgd) coupling without disturbing the gate channel control mechanism.