Study of the effect of the aluminum gate on light absorption in a Wavesensor

We report the study of the direct coupling of a waveguide and a wavesensor of Si CMOS-compatible fabrication process by numerical simulation. The position of the aluminum gate was varied and compared with a non-contact aluminum system. The edge position of the aluminum gate was varied to study its effect on the light absorption in silicon, intending to find the most suitable position to improve sensor efficiency and obtain further information on the effect of misalignment problems during fabrication. Finally, the results show changes in the light transmission in the waveguide and absorption in Si when the aluminum gate is placed in different positions.