Short Circuit Ruggedness of Trench Filled Superjunction Devices

In this study, TCAD simulations are used to construct trench seuperjunction devices with similars BV (~750V) and R
on,sp
< 10mΩ.cm
²
. TCAD mixed-mode simulation with self-heating is then used to study their short-circuit ruggedness. It is found that “p-sidewall” and “charge sheet” have shorter short circuit withstanding time, τ
sc
. High thermal conductivity materials are then proposed to alleviate the problem and verified in TCAD simulations.