Measurement of Time Dependent Reflection, Transmission and Absorption in a Laser Driven Switch for 250 GHz Radiation

We report experimental testing at 250 GHz of a laser-driven low loss silicon switch. The time-dependent reflection, transmission, and absorption of the wafer were measured and analyzed in both the nanosecond and microsecond time scales. The test results show that absorption plays a major role on both time scales. These results are important in analyzing the performance and output power of a 250 GHz quasi-optical ring resonator. The results should also help to improve the modeling of silicon switch performance on the nanosecond time scale.