The influence of self-heating phenomenon on the current-voltage curve of the Silicon-based Blocked-Impurity-Band Terahertz detectors

We fabricate Silicon-based blocked impurity band (BIB) terahertz detector using phosphorus-dopant. The response waveform distortion of the device can be observed at high bias or temperature. Through the forward and reverse scanning of IV curve, we verify that the thermal relaxation phenomenon is caused by the self-heating effect of the device, which results in a current increment of one order of magnitude. This work highlights the importance of the thermal effect and their influence on the performance of the detectors.