A 130GHz Two-Stage Common-Base Power Amplifier in 250nm InP

A two-stage millimeter-wave power amplifier (PA) in 250nm InP HBT technology is presented in this paper. Common-base topology is used for the driver stage and the output stage of the PA. The PA has a small-signal gain of 15.3 dB at 130 GHz and the small-signal 3-dB bandwidth is 16 GHz. The PA achieves 17.4 dBm saturated output power (P
sat
), 17.1 dBm output 1-dB compression point (OP1dB), and 23.2% peak power-added efficiency (PAE) at 130 GHz.