Coupled dual-layer antenna for optimized 250 GHz silicon CMOS detector

We present a novel planar antenna consisting of two coupled slots and impedance transforming elements for the optimized 250 GHz field-effect-transistor-based detector. The device includes a monolithically integrated silicon MOSFET and the antenna structure fabricated using commercial 180nm Si CMOS technology. The employment of a double-layer antenna and a single-finger transistor lets us substantially improve device performance. The enhanced detector exhibits a minimum optical noise equivalent power as low as 15 pW/$\sqrt{Hz}$ at 250 GHz.