A 128×128 Low-power Cryogenic Readout Circuit for Ge-based Blocked-impurity-band Detector

A 128 × 128 low-power cryogenic readout circuit suitable for Ge-based Blocked-impurity-band detector is developed by way of 0.18 μm CMOS technology in this paper. Based on the extraction of parameters and the establishment of the cryogenic temperature model of MOSFET, we focus on the design of the pixel circuit and readout mode. In order to reduce the power consumption, we adopt the rolling mode. The correlated double sampling technology is also used to reduce the channel noise in this design. The designed readout circuit can work at both room temperature and 6K, where the maximum power consumption is 16.37mW, and the working frequency is 20Hz.