Design Analysis of Linear Graded Quantum barriers in Ultavoilet-C Laser Diodes

We demonstrated ultraviolet laser diode with improved optical and electrical features. By employing linear graded rising aluminium concentration in phases from first quantum barrier to last quantum barrier, the suggested LD design improves internal quantum efficiency (IQE) and output power while minimizing the lasing threshold. The proposed LD increases optical gain while lowering carrier leakage from the active region. This study demonstrates high-efficiency AlGaN-based ultraviolet laser diodes with high optical gain and output power.