Thermal limits of the maximum operating frequency of SiC MOSFETs

The paper analyzes the frequency range within which the SiC MOSFET transistor contained in the boost converter can operate. For the considered dcdc converter, a set of computer simulations is carried out using the PLECS software, taking into account the self-heating phenomenon. The parameters of the SiC MOSFET are determined based on its catalog data. The calculations are made for the set values of thermal resistance, assuming that in the steady state the junction temperature of the transistor will reach the fixed maximum value. The obtained results are discussed.