Advantages of All-Copper Interconnects in SiC MOSFET Packaging: Effective Reduction of Spurious Parameters

SiC MOSFET has the small junction capacitance and low gate charge, and its witching processes are fast in both dv/dt and di/dt. Due to the presence of large stray inductors in traditional wire bonding (WB) packages, a series of drawbacks such as oscillations and electromagnetic interference will occur at higher di/dt. This paper mainly studies the device spurious parameters and thermal performance under the package of different structures by simulation based on the advantages of all-copper interconnects. By studying the stray parameters and thermal performance generated by different interconnect methods, the optimal interconnect model is selected to lay the theoretical foundation for subsequent sample production. We find that the all-copper interconnected package model with ceramic heat dissipation has the best heat dissipation effect. It also has absolute advantages in reducing parasitic inductance and parasitic resistance. This provides a good theoretical basis for subsequent actual production.