Optimizing 20V LDNMOS Transistors for PMIC Applications by Simulation Tools

For PMIC applications and especially in the automotive filed, many rigorous testing and checking in reliability concerns are required such as a long lifetime, wide operating voltages, temperature ranges and so on. Accordingly, a detailed understanding for HCI effect of LDNMOS transistor has been becoming an important part in the optimization of device design. In this study, a 20V LDNMOS transistor device is chosen for illustrating how to predict the optimum design parameter based on TCAD simulation tool.