Diamond Schottky p-i-n Diodes: DC, Small-Signal and Large-Signal Behavior for RF Applications

The paper features the fabrication, characterization, and modeling of diamond Schottky p-i-n diodes grown by plasma enhanced chemical vapor deposition. The electrical measurements are used to extract the parameters for a unified lumped-element SPICE model. The sub-circuit model accurately reproduces the forward and reverse bias DC characteristics, the capacitance-voltage and S-parameter measurements, as well as the large-signal, non-linear properties of the diodes. An early insertion point for diamond electronics will be high power RF passive systems such as receiver protectors and mixers. We validate the model by comparing it to the measured non-linearities produced by the diode in a single-ended unbalanced RF mixer configuration.